Extreme events such as rogue waves in optics and fluids are often associated with the merging dynamics of coherent structures. We present experimental and numerical results on the physics of extreme event appearance in a spatially extended semiconductor microcavity laser with an intracavity saturable absorber. This system can display deterministic irregular dynamics only, thanks to spatial coupling through diffraction of light. We have identified parameter regions where extreme events are encountered and established the origin of this dynamics in the emergence of deterministic spatiotemporal chaos, through the correspondence between the proportion of extreme events and the dimension of the strange attractor.

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.