Gas sensor, as one of the most important devices to detect noxious gases, provides a vital way to monitor the concentration and environmental information of gas in order to guarantee the safety of production. Therefore, researches on high sensitivity, high selectivity, and high stability have become hot issues. Since the discovery of the nanomaterial, it has been increasingly applied to the gas sensor for its distinguishing surface performances. However, 0-D and 1-D nanomaterials, with limited electronic confinement effect and surface effect, cannot reach the requirement for the production of gas sensors. This paper gives an introduction about the current researching progress and development trend of 2-D nanomaterials, analyzes the common forms of 2-D nanoscale structure, and summarizes the mechanism of gas sensing. Then, widely concerned factors including morphological properties and crystalline structure of 2-D nanomaterial, impact of doped metal on the sensibility of gas sensors, impact of symmetry, and working temperature on the selectivity of gas sensors have been demonstrated in detail. In all, the detailed analysis above has pointed out a way for the development of new 2-D nanomaterial and enhancing the sensibility of gas sensors.
Several-millimeter long SiC nanowires (NWs) with unique optical properties, excellent thermal stability and flexible nanomechanical properties were synthesized using a simple method with silicon and phenolic resin as the raw materials. The SiC NWs displayed special optical properties that were attributed to their large size and Al-doping. They displayed broad green emission at 527.8 nm (2.35 eV) and purple emission concentrated at 438.9 nm (2.83 eV), in contrast to the other results, and the synthesized SiC NWs could also remain relatively stable in air up to 1000 °C indicating excellent thermal stability. The Young’s moduli of the SiC NWs with a wide range of NW diameters (215–400 nm) were measured using an in situ nanoindentation method with a hybrid scanning electron microscopy/scanning probe microscopy (SEM/SPM) system for the first time. The results suggested that the values of the Young’s modulus of the SiC NWs showed no clear size dependence, and the corresponding Young’s moduli of the SiC NWs with diameters of 215 nm, 320 nm, and 400 nm were approximately 559.1 GPa, 540.0 GPa and 576.5 GPa, respectively. These findings provide value and guidance for studying and understanding the properties of SiC nanomaterials and for expanding their possible applications.
Although phototransistors for controlling photocurrent with electricity have been studied intensively for several decades, transistors with all-optical inputs that can control the photocurrent with light have not been investigated thus far. In this paper, a plasmonic porous Ag/TiO 2 transistor is fabricated with all-optical inputs. One light input acts as the source to generate a plasmonic-hot-electron photocurrent, while the other gate light changes the current channel by adjusting the height of an Ag/TiO 2 Schottky barrier. As a result, the plasmon-induced photocurrent generated by the source light can be enhanced by several to one hundred times by controlling the gate light. In addition to signal enhancement, the device can also be used for signal modulation and switching.
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