Using transient photocurrent and thermally stimulated current measurements it is found that mechanical surface roughening of anthracene crystals introduces trapping levels for both electrons and holes. The depths of the levels differ significantly; the energy of the hole trapping level is 0.46 eV whereas the energy of the electron trapping level is assessed to be greater than 0.9 eV. The nature of the trapping levels is discussed.
A simple kinetic model is developed to provide expressions for interpreting data from delayed fluorescence and phosphorescence experiments. The expressions for steady state, transient, and chopped light excitations are obtained for a system containing several triplet trapping levels which are well separated in energy. The interrelation of the experimental data obtained for the three modes of excitation enables the evaluation of depths, triplet lifetimes, and other parameters of the trapping levels.Es wird ein einfaches kinetisches Model1 entwickelt, um die Daten von verzogerten Fluoreszenzund Phosphoreszenz-Experimenten zu diskutieren. Die Gleichungen fur stationare, impulsformige und rechteckwellige Licht-Anregungen werden fur ein System mit diskreten Triplett-Haftstellen abgeleitet, die energetisch gut separiert sind. Der Vergleich der experimentellen Daten fiir die drei Anregungsarten erlauben die Bestimmung der Tiefen, der Lebensdauern und anderer Parameter der Haftstellenniveaus.
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