We report epitaxial growth of bismuth oxyhalides BiOXs (X = Cl, Br, and I) thin films with mist chemical vapour deposition at atmospheric pressure. The thin films grown at optimum...
Bismuth oxyhalides have attracted tremendous attentions in the field of optoelectronics because of the highly anisotropic crystal structure, tunable optical properties, and less toxicity. Few reports on epitaxial growth of...
Achieving
the synthesis of bismuth sulfide (Bi2S3) thin
films with high crystallinity and controllable morphology
via simple and energy-saving deposition processes is highly desired.
A novel, green, and open-air pressure solution-based deposition technique
was developed to prepare horizontally orientated Bi2S3 thin films by applying less toxic and commercially available
BiCl3 and thiourea as precursors. The deposition time was
effectively shortened to the minute level via controlling the mixing
mode of the precursors. The crystallinity and surface morphology of
Bi2S3 were highly dependent on the synthesis
temperatures. Bi2S3 thin films synthesized at
a moderate temperature of 450 °C possessed a continuous surface
with high crystallinity and exhibited superior photoelectrochemical
performance with a high photocurrent density of 2.6 mA/cm2 at 0.6 V vs Ag/AgCl. The promising photoelectrochemical performance
can be attributed to the high transfer efficiency of photogenerated
electron–hole pairs owing to the small interfacial resistance
and long lifetime of photogenerated carriers.
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