Voltage controlled oscillator has been used in every field of the electronics industry, and plays an indispensable role. In the fractional divider, in order to reduce the product size, voltage controlled ring oscillator is used to meet the design requirements, at the same time as much as possible to reduce the area. The design of wide tuning voltage-controlled ring oscillator was designed with the reference voltage source. This design not only could reduce the error brought by the external voltage reference, and was also very good realization structure innovation in the film. This design used 0.5 μ m CMOS Hua technology. The post simulation results show: when the coarse voltage and fine voltage are respectively 1V and 2V, voltage waveform oscillator output swing is 2.4V; when the coarse voltage and fine voltage are respectively 1.13V and 2V, voltage waveform oscillator output swing is 2.8V; when the coarse voltage and fine voltage are respectively 1.3V and 2V, voltage waveform oscillator output swing is 3V. After simulations, the frequency range of the voltage-controlled ring oscillator adjustment is 100 ~ 200MHz.
A power amplifier (PA) for multi-mode multi-standard transceiver which is implemented in a TSMC 0.18μm process is presented. The proposed PA uses matching compensation, lossy matching network and negative feedback technique to improve bandwidth. To achieve the linearity performance, the two-stage PA operates in Class-A regime. Simulation results show that the power amplifier achieves maximum output power of more than 24dBm in 0.7~2.6GHz. The output P1dBof the PA is larger than 22dBm. The simulated power gain is more than 27dB. The S11 is less than-10dB and the S22 is under-5dB.
This paper presents a wideband low noise amplifier (LNA) for multi-standard radio application .The low noise amplifier achieves wideband matching with the structure of differential common gate .Meanwhile ,the low noise characteristic is achieved by noise canceling and capacitor cross-coupled. Fabricated in 0.18μm CMOS process, the LNA is designed to operate from 700MHz to 2.6GHz.As are shown in the results of simulation, when the LNA operates from 700MHz to 2.6GHz,the S11 is less than-10dB,the gain achieves 8.5 dB and the variation is within ±0.5dB.The noise figure is 2.2dB wih the supply voltage is 1.8v and the drain current is 8mA.
An up-conversion mixer has been designed for 0.7-2.6GHz multi-mode and multi-standard RF subsystem working under 1.8V voltage based on TSMC 0.18μm process in this paper. The circuit is based on the use of pseudo-differential structure of the Gilbert cell, and in order to increase the gain and linearity, is using a complementary trans-conductance current bleeding structure. In addition, a T-type LC networks can reduce the effect of the parasitic capacitance of the LO switching pairs, and make the linearity of the high-frequency greatly improved. Simulation results show that the circuit is working at 0.7-2.6GHz, the gain of the up-conversion is 9.5-9.7dB , the IIP3 of the circuit is 11.4-12.2dBm, and NF is 13.1-13.5dBm.
This paper reports a reconfigurable wideband passive mixer for direct conversion multimode multi-standard receivers. Different from the traditional current-commutating passive mixers, transconductor stage of this design is variable. And the TIA stage is a second-order low-pass transimpedance amplifiers based on Tow-Thomas biquad topology, working as a current mode filter. The mixer is controlled by a 4-bit control word to realize the flexible gain and variable intermediate frequency bandwidth. Other characteristics such as power consumption, NF, and linearity is also reconfigurable according to different communication standard. Circuit is implementing in 0.18μm CMOS technology. Post-simulation results show that, with the radio frequency ranges from 700 MHz to 2.6 GHz, it provides four voltage conversion gains (10/16/22/28dB) and three-3 dB intermediate frequency bandwidth (5/7.5/10MHz). Under the maximum gain, the double sideband NF of the mixer is 8.4 dB. And under the minimum gain, IIP3 is 13 dBm. The chip occupies an area of 0.248 mm2 and drains a current of 8.5mA from a 1.8 V supply when the mixer has highest gain.
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