I n this paper, we present a new capacitance extraction method named Dimension Reduction Technique ( D R T ) f o r S D V L S I interconnects. T h e D R T converts a complex 3Dproblem into a series of cascading sample &D problems. Each SD problem is solved separately, so we can choosethe most e f i c i e n t method according to the arrangement of conductors. More importantly, it is very easy to obtain the analytical solutions of SD problem i n m a n y layers such as the pure dielectric layers and the layers with parallel signal lines. Therefore, the domain that has to be analyzed numerically is minimized. This leads to the drastic reduction of the compuhing time and m e m o r y needs. W e have used the D R T to extract the capacitances of multilayered and multiconductor cross-overs, bends, via with signal lines and open-end. T h e results are i n good agreement with those of Ansoft's S P I C E L I N K and MIT's FastCap, B u t the contputing time and m e m o r y size used by the DRT are several even tens times less than those used by S P I C E L I N K and FastCap.
Conductive yarns have emerged as a viable alternative to metallic wires in e-Textile devices, such as antennas, inductors, interconnects, and more, which are integral components of smart clothing applications. But the parasitic capacitance induced by their micro-structure has not been fully understood. This capacitance greatly affects device performance in high-frequency applications. We propose a lump-sum and turn-to-turn model of an air-core helical inductor constructed from conductive yarns, and systematically analyze and quantify the parasitic elements of conductive yarns. Using three commercial conductive yarns as examples, we compare the frequency response of copper-based and yarn-based inductors with identical structures to extract the parasitic capacitance. Our measurements show that the unit-length parasitic capacitance of commercial conductive yarns ranges from 1 fF/cm to 3 fF/cm, depending on the yarn’s microstructure. These measurements offer significant quantitative estimation of conductive yarn parasitic elements and provide valuable design and characterization guidelines for e-Textile devices.
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