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This letter reports the fabrication and performance of back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes. Devices with a 60-μm-diameter active area and a double-mesa structure exhibit a low dark current density of 1.06 × 10−8 A/cm2 at the reverse bias of 20 V and a maximum multiplication gain up to 3000 at the reverse bias of 91 V. The temperature dependence of avalanche voltage shows a large positive temperature coefficient of 0.05 V/K, confirming that avalanche multiplication is the dominant gain mechanism in the photodiodes.

Abstract. The angular distribution of the 2 H( 6 He, 7 Li)n reaction was measured with a secondary 6 He beam of 36.4 MeV for the first time. The proton spectroscopic factor of 7 Li ground state was extracted to be 0.42 ± 0.06 by normalizing the calculational differential cross-sections with the distorted-wave Born approximation to the experimental data. It was discussed that the uncertainty of extracted spectroscopic factors from the one-nucleon transfer reactions induced by deuteron might be reduced by determining the volume integrals of imaginary optical potentials precisely.

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