Novel semiconductor-base nanotechnology is gradually moving into new applications in the world economy. Semiconductor application requires increasing of investigations in the direction of their properties. The primary criterion of semiconductor suitability for use in semiconductor devices is its electrical properties, particularly current carriers mobility. Therefore, the problem connected with the explanation of the experimental results of current carriers mobility on the base of theoretical formulas is very urgent. In the present paper current carriers mobility due to ionized impurity scattering is discussed and calculated using numerical methods. Calculations have been done for different temperatures and different range of current carriers concentration in InAs.
The electrical properties of n-type crystals of InAs compound, grown from stoichiometric melt by the horizontal zone melting method, have been investigated in the temperature range of 4.2 K-300 K before and after fast neutron irradiation up to high integral fluences of 2×1018n∙cm-2. At a fixed temperature electrons concentration (n) increases almost by one order during irradiation, and practically does not change with increasing of temperature. n increases only slightly by increasing of temperature near 300 K, both before and after irradiation. When ≥ 4×1018cm-3 the change of during irradiation is negligible. Comparison of experimental data of mobility with theory shows that the privileged scattering mechanism of electrons at 300 K is scattering on optical phonons in InAs with 1016-1017 cm-3 and scattering on ions of impurity in InAs with n~1018-1019 cm-3. The analysis shows that during irradiation point type scattering centers of donor-type structural defects with shallow levels in the forbidden zone appear. Consequently, the mobility decreases during irradiation. At 300 K in sample with electrons concentration of 3×1016 cm-3 the mobility decreases by 5 times after irradiation, which is equivalent to the formation of 1.5×1019cm-3 charged point scattering centers.
The electrical properties of n-type crystals of InAs compound, grown from stoichiometric melt by the horizontal zone melting method, have been investigated in the temperature range of 4.2 K-300 K before and after fast neutron irradiation up to high integral fluences of 2×1018n?cm-2. At a fixed temperature electrons concentration (n) increases almost by one order during irradiation, and practically does not change with increasing of temperature. n increases only slightly by increasing of temperature near 300 K, both before and after irradiation. When ? 4×1018cm-3 the change of during irradiation is negligible. Comparison of experimental data of mobility with theory shows that the privileged scattering mechanism of electrons at 300 K is scattering on optical phonons in InAs with 1016-1017 cm-3 and scattering on ions of impurity in InAs with n~1018-1019 cm-3. The analysis shows that during irradiation point type scattering centers of donor-type structural defects with shallow levels in the forbidden zone appear. Consequently, the mobility decreases during irradiation. At 300 K in sample with electrons concentration of 3×1016 cm-3 the mobility decreases by 5 times after irradiation, which is equivalent to the formation of 1.5×1019cm-3 charged point scattering centers.
The system of triple In1-xGaxAs continuous solid solutions allows the solution of the many problems of modern semiconductor technology as microelectronics, optoelectronics, and nanoelectronics. The remarkable manufactural properties of ternary In1-XGaXAs solid solutions make them very useful nanotech performance materials for manufacture nanotech products, such as nanowires, nanotubes, etc. For successful solution of this problem, it is necessary to reveal their intrinsic properties and eliminate the effect of structural imperfections existing in thin films and layers, which is possible by investigating crystals of In1-xGaxAs solid solutions in bulk form. The complete miscibility of components in the solid and liquid state and the linear dependence of lattice parameter on the composition of In1-xGaxAs solid solutions allow to consider this system as a pseudo-binary alloys system of two components of (GaAs)x and (InAs)1-x like SiGe alloys system. This feature of the alloys has enabled to apply the comparatively affordable and straightforward method of direct fusion process of InAs and GaAs components for producing of In1-xGaxAs alloys with stable chemical composition. Carefully selected conditions of the fusion and processing of crystal growth have allowed obtaining several compositions of InAs-rich In1-xGaxAs alloys with uniform distribution of components across the ingot of single crystal by one fusion.
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