Hydrogen passivation of grain boundaries in poly-Si solar cells from the backside of the cells is studied by using a Kaufman ion source in conjunction with electron beam induced current (EBIC) measurements. It is found that the EBIC measurement is an effective way to monitor the passivation efficiency. Grain boundary passivation depths of over 230 pm from the back surface are determined by EBIC measurements on the frontside of the cell. Quantitative determination of the grain boundary recombination velocity and minority carrier diffusion length before and after passivation are presented. Nonuniform passivation along grain boundaries was observed. An annealing experiment after hydrogen passivation provides insight into the hydrogen configuration in the grain boundaries. Passivierung von Korngrenzen durch Wasserstoff an Poly-Si-Solarzellen von der Zellenruckseite wird unter Verwendung einer Kaufmanschen Ionenquelle in Verbindung mit EBIC-Messungen untersucht. Es zeigt sich, daB EBIC-Messung eine wirksame Methode zur Registrierung des Passivierungsgrades ist. Korngrenzenpassivierungstiefen von mehr als 230 pm von der Riickseite werden durch EBIC-Messungen an der Vorderseite der Zelle bestimmt. Quantitative Werte der Korngrenzen-Rekombinationsgeschwindigkeit und der Minoritatsladungstragerdiffusionslange vor und nach der Passivierung werden mitgeteilt. Es wird eine ungleichmaBige Passivierung entlang der Korngrenze beobachtet. Ein Ausheilexperiment nach Passivierung durch Wasserstoff gibt Einblick in die Wasserstoffkonfiguration in den Korngrenzen.
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