Single crystals of ZrS2 of the Group IVB transition metal dichalcogenide are synthesized by a chemical vapor transport method. The crystals are characterized by Raman spectroscopy, X‐ray diffraction, X‐ray photoelectron spectroscopy, and energy dispersive X‐ray spectroscopy. Field‐effect transistors are fabricated on Si substrates using exfoliated multilayer ZrS2 flakes as a channel material. N‐channel characteristics with an on/off ratio of approximately 200 are observed, and the field‐effect mobility is estimated. The large hysteresis in the transfer curves and the time‐dependent drain‐to‐source current can be attributed to the charge‐trapping centers at the ZrS2/SiO2 interface. These results imply the significance of the interface and the potential applicability of ZrS2 as a novel 2D material for nanoelectronic devices.
Misfit layer compounds are another family of layered materials, which are typically described as (MX) n TX 2 (M = Sn, Pb, Bi, rare earth metals; T = Nb, Ta, Ti, V, Cr; X = S, Se; 1.08 < n < 1.23). [7][8][9] They consist of MX and TX 2 sublattices. These subsystems have a different geometry in the a-b plane. The projection of the typical crystal structure along [1 0 0] is shown in
Semiconducting two‐dimensional materials such as transition metal dichalcogenides have attracted considerable attention because they can be used as ultrathin materials for various applications including flexible electronic devices. Single crystals of zirconium disulfide (ZrS2) are synthesized by a chemical vapor transport method. Field‐effect transistors using exfoliated multilayer ZrS2 flakes exhibit n‐channel characteristics with an on/off ratio of approximately 200. More information can be found in the Full Paper by Yoshihiro Shimazu et al. on page 1078 in Issue 10, 2018 (DOI: 10.1002/cnma.201800304).
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