A bottom-gate, bottom-contact (BGBC) organic thin-film transistor (OTFT) with carrier-doped regions over source-drain electrodes was investigated. Device simulation with our originally developed device simulator demonstrates that heavily doped layers (p+ layers) on top of the source-drain contact region can compensate the deficiency of charge carriers at the source-channel interface during transistor operation, leading to the increase of the drain current and the apparent field-effect mobility. The phenomena expected with the device simulation were experimentally confirmed in typical BGBC pentacene thin-film transistors. The 5-nm-thick p+ layers, located 10 nm (or 20 nm) over the source-drain electrodes, were prepared by coevaporation of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an acceptor dopant. Since the molecular doping in this study can increase the drain current without positive shift of threshold voltage, p+ layers were formed precisely on top of the source-drain regions. This study shows that common inferior characteristics of bottom-contact OTFT devices mainly derive from the supply shortage of charge carriers to the channel region. The importance of reliable molecular doping techniques or heavily doped semiconductor materials for improving OTFT device performance is clearly suggested.

Background It is unclear whether simultaneous primary neoplasm resection and immunotherapy for advanced lung cancer is safe. We report a case of an elderly man with advanced lung cancer and myxofibrosarcoma. Case presentation The advanced lung cancer was treated with pembrolizumab, and partial response was achieved in 3 months. However, the mediastinal cyst enlarged rapidly. We resected the mediastinal tumor and diagnosed it as myxofibrosarcoma. The postoperative course was uneventful. Immunotherapy was resumed after the operation without any adverse effects. No recurrence of mediastinal sarcoma or progression of lung cancer was found until the patient died in an accident 8 months after surgery. Conclusion Surgery for mediastinal sarcoma could be performed safely in combination with immunotherapy for advanced lung cancer.

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Purpose To evaluate the accuracy and time-efficiency of newly developed software in automatically creating curved planar reconstruction (CPR) images along the main pancreatic duct (MPD), which was developed based on a 3-dimensional convolutional neural network, and compare them with those of conventional manually generated CPR ones. Materials and methods A total of 100 consecutive patients with MPD dilatation (≥ 3 mm) who underwent contrast-enhanced computed tomography between February 2021 and July 2021 were included in the study. Two radiologists independently performed blinded qualitative analysis of automated and manually created CPR images. They rated overall image quality based on a four-point scale and weighted κ analysis was employed to compare between manually created and automated CPR images. A quantitative analysis of the time required to create CPR images and the total length of the MPD measured from CPR images was performed. Results The κ value was 0.796, and a good correlation was found between the manually created and automated CPR images. The average time to create automated and manually created CPR images was 61.7 s and 174.6 s, respectively (P < 0.001). The total MPD length of the automated and manually created CPR images was 110.5 and 115.6 mm, respectively (P = 0.059). Conclusion The automated CPR software significantly reduced reconstruction time without compromising image quality.

The current enhancement mechanism in contact-area-limited doping for bottom-gate, bottom-contact (BGBC) p-channel organic thin-film transistors (OTFTs) was investigated both by simulation and experiment. Simulation results suggest that carrier shortage and large potential drop occur in the source-electrode/channel interface region in a conventional BGBC OTFT during operation, which results in a decrease in the effective field-effect mobility. These phenomena are attributed to the low carrier concentration of active semiconductor layers in OTFTs and can be alleviated by contact-area-limited doping, where highly doped layers are prepared over source–drain electrodes. According to two-dimensional current distribution obtained from the device simulation, a current flow from the source electrode to the channel region via highly doped layers is generated in addition to the direct carrier injection from the source electrode to the channel, leading to the enhancement of the drain current and effective field-effect mobility. The expected current enhancement mechanism in contact-area-limited doping was experimentally confirmed in typical α-sexithiophene (α-6T) BGBC thin-film transistors.