Gold structures can be created in a scanning electron microscope (SEM) from the Me(2)Au(acac) precursor by direct writing with the electron beam. The as-deposited purity is usually poor, and a common purification approach is a post-annealing step that indeed is effective but also induces a volume reduction because of carbon loss and an undesirable reconfiguration of the gold structure, resulting in the loss of the original shape. We studied the shape change as a result of such purification, and to minimize this effect, the application of a tantalum and chromium buffer layer was investigated. These buffer materials are well-known for their good adhesion properties. We confirm by dedicated SEM, atomic force microscopy (AFM), and transmission electron microscopy (TEM) analysis that, for the creation of a uniform Au structure, tantalum is a better buffer layer material than chromium. Post-annealing of the Au electron-beam-induced deposition (EBID) patterns for 1 h at 600 °C in air resulted in a dramatic purity increase (from 8-12 atomic % Au to above 92 atomic % Au). The uncovered part of the tantalum layer can be easily etched away, resulting in a well-defined, high-purity, gold structure.
A method for additive layer‐by‐layer fabrication of arbitrarily shaped 3D silicon micro‐ and nanostructures is reported. The fabrication is based on alternating steps of chemical vapor deposition of silicon and local implantation of gallium ions by focused ion beam (FIB) writing. In a final step, the defined 3D structures are formed by etching the silicon in potassium hydroxide (KOH), in which the local ion implantation provides the etching selectivity. The method is demonstrated by fabricating 3D structures made of two and three silicon layers, including suspended beams that are 40 nm thick, 500 nm wide, and 4 μm long, and patterned lines that are 33 nm wide.
An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (- 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm(-1). Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.
Electron-beam-induced deposition of titanium oxide nanopatterns is described. The precursor is titanium tetra-isopropoxide, delivered to the deposition point through a needle and mixed with oxygen at the same point via a flow through a separate needle. The depositions are free of residual carbon and have an EDX determined stoichiometry of TiO2.2. High resolution transmission electron microscopy and Raman spectroscopy studies reveal an amorphous structure of the fabricated titanium oxide. Ellipsometric characterization of the deposited material reveals a refractive index of 2.2-2.4 RIU in the spectral range of 500-1700 nm and a very low extinction coefficient (lower than 10(-6) in the range of 400-1700 nm), which is consistent with high quality titanium oxide. The electrical resistivity of the titanium oxide patterned with this new process is in the range of 10-40 GΩ cm and the measured breakdown field is in the range of 10-70 V μm(-1). The fabricated nanopatterns are important for a variety of applications, including field-effect transistors, memory devices, MEMS, waveguide structures, bio- and chemical sensors.
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