Results of measurement of thermal resistance (R FS ) of film substrate interface of 10 nm (Fe 1-x Co x ) 1-y Cu y film on Si substrate with 50 nm SiO 2 sublayer are presented. The estimated magnitude is two orders greater then R FS of epitaxial manganite films on StTiO 3 substrate with and without sublayer. The significant increase of R FS is explained by granular structure of film with average size of grain about 10 nm. In this case the additional thermal barier in the film-substrate interface is appeared. It provides the change of regime of phonons propagation from ballistic to diffusion one. The principle possibility of variation of R FS in wide range as a task of nanotechnology is discussed.
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