The high demand for flexible spintronics based on multiferroic heterostructures makes growing high‐quality flexible, functional oxides urgently, in which needs to be deposited on lattice‐matched substrates. In this paper, ultraflexible and malleable iron (Fe)/BaTiO3 (BTO) multiferroic heterostructures are demonstrated, showing a perfect crystallinity and hetero‐epitaxial growth. In terms of performance, they indicate good multiferroic properties and excellent bending tunability, as well as obvious magnetoelectric (ME) coupling effect. During the phase transformation from the rhombohedral phase to the orthorhombic phase of BTO layers in the heating process, a large ME coupling coefficient of 120 Oe °C−1 along the out‐of‐plane direction is obtained. This value keeps consistent in the phase‐field simulation of magnetic domain evolution, in which the biaxial compressive strain induced‐magnetoelastic anisotropy facilitates the magnetic easy axis of Fe layers to the [110] or [–1–10] direction. Besides, ultraflexible Fe/BTO heterostructures are found to have a 690 Oe ferromagnetic resonance (FMR) field shift along the out‐of‐plane direction under the flexible tuning (R = 5 mm). This work should pave a way toward flexible spintronic and functional devices with fast speed, portability, and low energy consumption.
Ferroelectric memory is one of the most attractive emerging nonvolatile memory. Conventional methods to increase storage density in ferroelectrics include reducing the storage bit size or fabricating 3D stacks. However, the former will face a physical limit finally, and the integration of single‐crystalline ferroelectric oxide following the latter still remains a great challenge. Here, a new method is introduced to construct a scroll‐like 3D memory structure by self‐rolling‐up single‐crystalline ferroelectric oxides. PbZr0.3Ti0.7O3 single‐crystalline thin film is chosen as a prototype and epitaxially grown on another oxide stressor layer with a few lattice‐mismatch. Releasing such “Pb(Zr, Ti)O3/stressor” bilayered structure from the substrate induces self‐rolling‐up due to the internal stress from the lattice‐mismatch. High‐density information can be written in the form of switched ferroelectric domains on those flat “Pb(Zr, Ti)O3/stressor” membranes via piezoelectric force microscopy. In self‐rolling‐up membranes, information density can be experimentally enhanced up to 45 times. Theoretically, the freestanding “Pb(Zr, Ti)O3/stressor” membranes have a strongly driven force to self‐rolling‐up, and the area ratio can enhance 100–450 times, corresponding to an ultra‐high density information storage of 102 Tbit In−2. This study provides a new and general method to develop compact, high‐density, and 3D memories from oxide materials.
Voltage control of magnetic anisotropy (VCMA) in Si-compatible ferroelectric/ferromagnetic multiferroic thin films is promising to enable power-efficient and integrated magnetic memories. However, their VCMA effect is weak and always smaller...
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