Lead-free sodium bismuth titanate-aluminate bismuth [0.97 (Na 0.5 Bi 0.5 )TiO 3 -0.03BiAlO 3 ] solid-solution films deposited on (100) Pt/TiO 2 /SiO 2 /Si substrates by a sol-gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2P r of 38 lC/cm 2 and a leakage current density of 10 -7 -10 -6 A/cm 2 (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT-BA films a viable lead-free alternative to the lead-based materials in such as biosensors and ultrasonic transducers. H.-E. Kim-contributing editor Manuscript No. 37322.
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