The mesoporous α-Fe2O3/cyclized-polyacrylonitrile (C-PAN) composite was synthesized by a rapid and facile two-step method. The electrode was fabricated without conductive carbon addictive and employed as anode for lithium-ion batteries. Results demonstrate that building a conformal coating of a C-PAN network can provide a strong adhesion with active materials and contribute excellent electronic conductivity to the electrode, which can relieve the huge volume changes during a lithiation/delithiation process and accelerate the charge transfer rate. The material exhibited high reversible capacity of ca. 996 mAh g(-1) after 100 cycles at 0.2C, 773 mAh g(-1) at 1C and 655 mAh g(-1) at 2C, respectively, showing well-enhanced cycling performance and superior rate capacity, and also exhibiting significantly improved power density and energy density compared to the traditional graphite materials. Our results provide a facile and efficient way to enhance the performance of α-Fe2O3 anode material, which also can be applied for other oxide anode materials.
Near-interface oxide traps severely affect the voltage stability of silicon carbide metal-oxide-semiconductor devices. In this work, electron cyclotron resonance microwave nitrogen plasma and electron cyclotron resonance microwave nitrogen-hydrogen-mixed plasma were used to passivate near-interface oxide traps in silicon carbide metal-oxide-semiconductor capacitors. An improved low-temperature midgap voltage drift method was proposed to evaluate the voltage stability of silicon carbide metal-oxide-semiconductor capacitors. Results showed that the effect of passivating near-interface oxide traps and voltage stability could be improved by increasing the nitrogen passivation time. However, excessive nitrogen passivation created deep-level interface traps that degraded the interface quality, and a small amount of hydrogen could passivate the deep-level traps produced by the excess nitrogen. As a result, the samples subjected to the passivation process with the nitrogen-hydrogen-mixed plasma had a smaller flat-band voltage drift and more stable carbide metal-oxide-semiconductor capacitors than the samples subjected to nitrogen plasma. However, the excessive introduction of hydrogen also produced additional defects, consequently making the stability of the metal-oxide-semiconductor devices sensitive to the time of the passivation process by nitrogen-hydrogen-mixed plasma. Therefore, the suitable time of mixed plasma passivation is crucial to the improvement of the stability of devices.
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