Solution‐processed, fully flexible ZnO thin‐film transistors (TFTs) on semitransparent substrates are demonstrated. Our devices show exceptional and unprecedented stablity against various bending stresses, i.e., bending, rolling, wearing, and folding, exhibiting no degradation at tensile strains up to 6.35%.

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We propose an efficient hand gesture recognition (HGR) algorithm, which can cope with time-dependent data from an inertial measurement unit (IMU) sensor and support real-time learning for various human-machine interface (HMI) applications. Although the data extracted from IMU sensors are time-dependent, most existing HGR algorithms do not consider this characteristic, which results in the degradation of recognition performance. Because the dynamic time warping (DTW) technique considers the time-dependent characteristic of IMU sensor data, the recognition performance of DTW-based algorithms is better than that of others. However, the DTW technique requires a very complex learning algorithm, which makes it difficult to support real-time learning. To solve this issue, the proposed HGR algorithm is based on a restricted column energy (RCE) neural network, which has a very simple learning scheme in which neurons are activated when necessary. By replacing the metric calculation of the RCE neural network with DTW distance, the proposed algorithm exhibits superior recognition performance for time-dependent sensor data while supporting real-time learning. Our verification results on a field-programmable gate array (FPGA)-based test platform show that the proposed HGR algorithm can achieve a recognition accuracy of 98.6% and supports real-time learning and recognition at an operating frequency of 150 MHz.

A direct photopatternable organosiloxane-based organic-inorganic hybrid gate dielectric was synthesized. The sol-gel derived hybrid dielectric could be cured at a temperature sufficiently low enough to apply to temperature-sensitive polymeric substrates, whilst maintaining good electrical properties. The addition of hexa(methoxymethyl)melamine minimizes the polar silanol group by enhancing the cross-linking reaction and improves the film density, so that the resulting hybrid dielectric retains both thermal and chemical stability against the highly basic aqueous semiconductor precursor, forming a coherent interface between the dielectric and the semiconductor. The synthesized hybrid materials allow for a high-performance solution-processed flexible ZnO transistor on polymeric substrate at 150 C.