150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick SiO 2 buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/SiO 2 /PET films were analyzed with respect to the thickness of the SiO 2 buffer layer. The mechanical properties were outstanding at a SiO 2 thickness of 50 nm, with a resistivity of 1.45 × 10 −3 Ω-cm, carrier concentration of 8.84 × 10 20 /cm 3 , hall mobility of 4.88 cm 2 /Vs, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the SiO 2 thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

The structural properties of HfO 2 films could be improved by thermal treatment owing to their crystallization. We deposited HfO 2 films on sapphire by radio frequency (RF) magnetron sputtering, whose base vacuum pressure was lower than 4.5 × 10 −6 Pa, RF power was 100 W, working temperature was 200°C, working pressure was 3 mTorr, and the density of the active gas (Argon) was 20 sccm. After depositing the HfO 2 films, the samples were thermally treated by rapid thermal annealing (RTA) in O 2 ambient at different temperatures. Subsequently, the measured physical properties (structural, morphological, and optical) indicated that the crystallite size, refractive index at a wavelength of 632 nm, and packing density increased with rising temperatures. In particular, an HfO 2 film thermally treated at 800°C in O 2 ambient had the highest refractive index of 2.0237 and packing density of 0.9638. The relation between optical and structural properties was also analyzed.

No abstract

No abstract

No abstract