We present experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions. The experiments show that, for MgObased magnetic tunnelling junctions, the tunnelling magnetoresistance ratio is as large as 155% and the intrinsic switching current density is as low as 1.1 × 10 6 A cm −2. The thermal effect and current pulse width on spin-transfer magnetization switching are explored based on the analytical and numerical calculations. Three distinct switching modes, thermal activation, dynamic reversal, and precessional process, are identified within the experimental parameter space. The switching current distribution, write error, and read disturb are discussed based on device design considerations. The challenges and requirements for the successful application of spin-transfer torque as the write scheme in random access memory are addressed.
We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs) with large tunneling magnetoresistance (TMR) ratio of up to 150 % and low intrinsic switching current density of 2-3 x 10 6 A/cm 2 . The switching data are compared to those obtained on similar MTJ nanostructures with AlO x barrier. It is observed that the switching current density for MgO based MTJs is 3-4 times smaller than that for AlO x based MTJs, and that can be attributed to higher tunneling spin polarization (TSP) in MgO based MTJs. In addition, we report a qualitative study of TSP for a set of samples, ranging from 0.22 for AlO x to 0.46 for MgO based MTJs, and that shows the TSP (at finite bias) responsible for the current-driven magnetization switching is suppressed as compared to zero-bias tunneling spin polarization determined from TMR.
Dual magnetic tunnel junction (MTJ) structures consisting of two MgO insulating barriers of different resistances, two pinned reference layers aligned antiparallel to one another, and a free layer embedded between the two insulating barriers have been developed. The electron transport and spin dependent resistances in the dual MTJ structures are accounted for by sequential tunneling with some spin-flip relaxation in the central electrode (the free layer). With a tunneling magnetoresistance ratio of 70%, a switching current density Jc (at 30ms) of 0.52MA∕cm2 is obtained, corresponding to an intrinsic value of Jc0 (at 1ns) of 1.0MA∕cm2. This value of Jc0 is 2–3 times smaller than that of a single MgO insulating barrier MTJ structure and results from improvements in the spin-transfer torque efficiency. The asymmetry between JcAP→P and JcP→AP is significantly improved, which widens the read-write margin for memory device design. In addition, the experimental results show that the switching current density can be further reduced when an external field is applied along the hard axis of the free layer.
We observe magnetization dynamics induced by spin momentum transfer in the noise spectra of current perpendicular to the plane giant magnetoresistance spin valves. The dynamics are observable only for those combinations of current direction and magnetic configuration in which spin transfer acts to reorient the free layer magnetization away from the direction set by the net magnetic field. Detailed measurements as a function of magnetic configuration reveal an evolution of the noise spectra, going from a spectrum with a well-defined noise peak when the free layer is roughly collinear with the pinned layer to a spectrum dominated by f 1 noise when the free layer is in an orthogonal configuration. Finally, the amplitude of the corresponding resistance noise increases rapidly with increasing current until it saturates at a value that is a substantial fraction of the magnetoresistance between parallel and antiparallel states.
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