Self‐assemble monolayer (SAM) has been proven to be an effective interfacial layer to improve the performance of perovskite solar cells (PSCs). Herein, a 3‐mercaptopropyltrimethoxysilane (MPTMS) SAM is used as an interlayer between the SnO2 electron‐transporting layer (ETL) and the perovskite film to modify fully air‐processed PSCs. In the devices prepared by the two‐step method, this MPTMS SAM interlayer can slow down the crystal growth of perovskite and smooth the surface of the SnO2 ETL, which could induce a high‐quality perovskite absorber. In contrast, it can passivate the SnO2/perovskite interface to enhance the extraction efficiency of photogenerated electrons and restrain carrier recombination. As a result, with suitable MPTMS SAM modification, the average power conversion efficiency (PCE) of the fully air‐processed PSCs is significantly improved from 16.62% to 18.75%, and the best device achieved a champion PCE over 20%. Moreover, the modified PSCs exhibit a good stability in ambient air. This research shows that the interface modification of MPTMS SAM is a feasible method for high‐performance PSCs.
Prenatal diagnostics hold great significances for pregnant women longing for healthy babies. Fetal nucleated red blood cells (fNRBCs) with complete genome of the fetus have been regarded as an important...
Tin–lead (Sn–Pb) binary low‐bandgap perovskites are more environmentally friendly than conventional Pb‐based perovskites and promise to deliver high photovoltaic performance by constructing tandem solar cells. However, the energy‐level mismatch between functional layers and tremendous trap states in perovskite films make it challenging to reduce the high open‐circuit voltage (Voc) loss in Sn–Pb binary perovskite solar cells (PSCs). Herein, energy loss reduction at the hole collection interface in Sn–Pb binary PSCs is demonstrated using nickel oxide (NiOx) as the hole transport material (HTM) with optimal poly[(9,9‐bis(3′‐(N,N‐dimethylamino)propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctyfluorene)] (PFN) modification, which enables a significantly enhanced Voc compared to the traditional poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)‐based devices. The NiOx/PFN bilayer has a downward‐shifted valence band compared to PEDOT:PSS, providing well‐matched energy‐level alignment with the perovskite material, resulting in more fluent charge transfer and reduced Voc losses. The optimized device has a high Voc of 0.88 V and an efficiency of 19.80%, surpassing the previous results reported for NiOx‐based Sn–Pb PSCs. Moreover, the robust NiOx/PFN substrate and the high‐quality perovskite film grown on it make the device less vulnerable to ambient exposure. This work highlights the significance of ideal hole conductors and interface engineering in efficient and stable Sn–Pb low‐bandgap PSCs.
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