Thin film transistors (TFTs) with amorphous silicon films crystallized via continuous-wave green laser at a wavelength of 532 nm exhibit very different electrical characteristics in various crystallization regions, corresponding to the Gaussian energy density distribution of the laser beam. In the center region subjected to the highest energy density, the full melting scheme led to the best crystallinity of the polycrystalline silicon film, resulting in the highest field-effect mobility of 500 cm2 V−1 s−1. In contrast, the edge region that resulted in solid phase crystallization exhibited the worst mobility of 48 cm2 V−1 s−1 for the polycrystalline silicon TFTs.
In this paper, the surface morphology transformation of the sprayed carbon nanotube (CNT) thin film irradiated with the excimer laser has been systematically investigated. Under the excimer-laser irradiation, two phenomena, including the annealing and ablation effects, were found to be dependent on the incident laser energy and overlapping ratios. Moreover, the extremely high protrusions would be produced in the interface between the annealing and ablation regions. The mechanism of the CNT thin film under the excimer laser irradiation was, therefore, proposed to derive the surface morphology modifications and the further reinforced crystallinity with proper laser energy densities and overlapping ratios.
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