Electroluminescence (EL) images with absolute photon emissions from Cu(In, Ga)Se 2 (CIGS) solar cells were obtained under different forward current injections, with the spatially distributed EL emission becoming non-uniform as the current density gradually increases. A distributed two-diode electrical three-dimensional model was established which simulated the dark current density-voltage curves and the absolute EL images of the CIGS solar cells very well. Then, the resistive effects were analyzed using this model and simulation results show that the sheet resistance of the transparent conductive oxide (TCO) layer dominates the non-uniform distribution of the EL emission in the studied CIGS thin-film solar cells. The effect of the sheet resistance of the TCO and the series resistance of the micro-diode on the EL variations is found to become obvious under high-current-injection conditions, whereas the effect of shunt resistance of the micro-diode on the EL variations becomes more obvious under low-resistance value or low-current-injection conditions.
Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.