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Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) surface. Our tight-binding analysis revealed that the lattice of the β12-sheet could be decomposed into two triangular sublattices in a way similar to that for a honeycomb lattice, thereby hosting Dirac cones. Furthermore, each Dirac cone could be split by introducing periodic perturbations representing overlayer-substrate interactions. These unusual electronic structures were confirmed by angle-resolved photoemission spectroscopy and validated by first-principles calculations. Our results suggest monolayer boron as a new platform for realizing novel high-speed low-dissipation devices.

Superconductivity of nanosized Pb-island structures whose radius is 0.8 to 2.5 times their coherence length was studied under magnetic fields using low-temperature scanning tunneling microscopy and spectroscopy. Spatial profiles of superconductivity were obtained by conductance measurements at zero-bias voltage. Critical magnetic fields for vortex penetration and expulsion and for superconductivity breaking were measured for each island. The critical fields depending on the lateral size of the islands and existence of the minimum lateral size for vortex formation were observed.

The force sensor is key to the performance of atomic force microscopy (AFM). Nowadays, most atomic force microscopes use micromachined force sensors made from silicon, but piezoelectric quartz sensors are being applied at an increasing rate, mainly in vacuum. These self-sensing force sensors allow a relatively easy upgrade of a scanning tunneling microscope to a combined scanning tunneling/atomic force microscope. Two fundamentally different types of quartz sensors have achieved atomic resolution: the "needle sensor," which is based on a length-extensional resonator, and the "qPlus sensor," which is based on a tuning fork. Here, we calculate and measure the noise characteristics of these sensors. We find four noise sources: deflection detector noise, thermal noise, oscillator noise, and thermal drift noise. We calculate the effect of these noise sources as a factor of sensor stiffness, bandwidth, and oscillation amplitude. We find that for self-sensing quartz sensors, the deflection detector noise is independent of sensor stiffness, while the remaining three noise sources increase strongly with sensor stiffness. Deflection detector noise increases with bandwidth to the power of 1.5, while thermal noise and oscillator noise are proportional to the square root of the bandwidth. Thermal drift noise, however, is inversely proportional to bandwidth. The first three noise sources are inversely proportional to amplitude while thermal drift noise is independent of the amplitude. Thus, we show that the earlier finding that quoted an optimal signal-to-noise ratio for oscillation amplitudes similar to the range of the forces is still correct when considering all four frequency noise contributions. Finally, we suggest how the signal-to-noise ratio of the sensors can be improved further, we briefly discuss the challenges of mounting tips, and we compare the noise performance of self-sensing quartz sensors and optically detected Si cantilevers.

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We present here a scanning tunneling microscope study of the initial bonding structure and subsequent reaction mechanism of C 2 H 2 with the Si͑001͒ surface. Upon exposure of the sample at room temperature to 0.2 L of C 2 H 2 ͑approximately 20% coverage͒ adsorption of the molecule on alternate dimer pairs is observed, leading to either a local 2ϫ2 or c(2ϫ4) structure. In the filled-state image, a local minimum is observed in the center of the reacted dimer pairs, while the unreacted dimer pairs maintain the normal bean-shaped contour of the clean surface. The molecule forms an overlayer with either local 2ϫ2 or c(4ϫ2) order, leading to a saturation coverage of 0.5 monolayers. Upon annealing the substrate at 775 K the surface becomes disordered and the steps are no longer visible. After further annealing at 875 K, SiC clusters are formed and the 2ϫ1 structure is again seen between the clusters. For a starting coverage of 20%, annealing to higher temperatures around 1100 K leads to pinning of the step movement by the SiC clusters. For a starting coverage of 0.5 monolayer, annealing at 1100 K results in faceting of the surface. Further annealing at 1275 K creates anisotropic facets that are oriented along the ͓110͔ direction with a typical aspect ratio of approximately 4 to 5. These facets act as nucleation sites for subsequent carbonization and SiC growth. ͓S0163-1829͑97͒05032-7͔

No abstract

Modification of the reconstruction of an Au(111) surface with a scanning tunneling microscope (STM) is demonstrated. This modification is accomplished by transferring a number of surface atoms to the STM tip to generate a surface multivacancy (hole), which modifies the stress distribution at the surface. The structural changes that follow the tip-induced surface perturbation are imaged in a time-resolved manner. The structural modification is the result of both short-range interactions, which lead to local atomic relaxation, and long-range elastic interactions, which produce large-scale rearrangements.