by hot pressing and annealing. Their microstructures, phase compositions, lattice oxygen contents, and thermal conductivities were evaluated. The SiC doped with rare-earth oxides attained thermal conductivities in excess of 200 W/(m K); however, the SiC doped with additives containing alumina had thermal conductivities lower than 71 W/(m K). The high thermal conductivity of the rare-earth-oxide-doped SiC was attributed to the low oxygen content in SiC lattice, high SiC-SiC contiguity, and lack of to ␣-SiC polytypic transformation. The low thermal conductivity of the alumina-doped SiC was attributed to the point defects resulting from the dissolution of Al 2 O 3 into SiC lattice and the occurrence of polytypic transformation.
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