A complete horizontal molecular orientation of a linear-shaped thermally activated delayed fluorescent guest emitter 2,6-bis(4-(10Hphenoxazin-10-yl)phenyl)benzo[1,2-d:5,4-d′] bis(oxazole) (cis-BOX2) was obtained in a glassy host matrix by vapor deposition. The orientational order of cis-BOX2 depended on the combination of deposition temperature and the type of host matrix. Complete horizontal orientation was obtained when a thin film with cis-BOX2 doped in a 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) host matrix was fabricated at 200 K. The ultimate orientation of guest molecules originates from not only the kinetic relaxation but also the kinetic stability of the deposited guest molecules on the film surface during film growth. Utilizing the ultimate orientation, a highly efficient organic light-emitting diode with the external quantum efficiency of 33.4 ± 2.0% was realized. The thermal stability of the horizontal orientation of cis-BOX2 was governed by the glass transition temperature (Tg) of the CBP host matrix; the horizontal orientation was stable unless the film was annealed above Tg.
A multiwavelength, multistripe tunable laser array is proposed, and its application to absorption spectroscopy is demonstrated. Laser waveguides doped with Rhodamine 6 G dye were integrated on a plastic chip, and simultaneous output at different wavelengths was obtained by use of a distributed-feedback technique. A very low threshold of 3 muJ was attained, and spectrally narrowed output (<0.1 nm) was obtained. A scheme for digital spectroscopy is also proposed based on this laser array, and absorption spectroscopy of sodium atoms without wavelength scanning is demonstrated by use of a sodium-vapor cell.
Two approaches of fabricating grating structures for waveguided plastic dye lasers are described and compared for lasing performance. Rhodamine6G-doped poly(methyl methacrylate) (PMMA) film on a PMMA substrate was used for the waveguide, and a distributed-feedback (DFB) laser operation with a single-propagation mode was demonstrated. The performances of both types of permanent grating structured DFB dye laser were better than those of a DFB dye laser on a plain waveguide with a dynamic grating formed by the interference of two pump beams. Wide tuning range is expected by use of a multistripe DFB laser with different grating pitches.
For the purpose of thin-layer surface analysis, comparison of laser ablation by 24 ns ArF laser pulses at 193 nm and that by 150 fs Ti:sapphire laser pulses at 780 nm for samples ranging from metals to semiconductors is reported. In contrast to nanosecond laser pulses, the ablation threshold for femtosecond laser pulses could be reduced significantly. In particular, the threshold for a Si sample was reduced to about one order of magnitude, and an ablation rate of 0.48 nm/shot was obtained at 5% above the threshold fluence. The root-mean-square (RMS) growth rate in the roughness of the ablated surface was 0.05 nm/shot. These results show the advantages of femtosecond laser ablation for trace element analysis of a wide range of materials, coupled with laser-induced fluorescence (LIF) spectroscopy.
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