CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices.
In this work we investigated the effects of the addition of guanidinium [C(NH2)3; GA] on CH3NH3PbI3 perovskite solar cells fabricated at a high temperature of 190°C in atmospheric air. The addition of GA iodide and the insertion of decaphenylpentasilane between the perovskite and hole transport layer improved the external quantum efficiency and short-circuit current density, and the conversion efficiencies were stable after 1 month. X-ray diffraction showed that the lattice constant of the perovskite crystals was increased by the addition of GA, and addition of GA also improved the surface morphology. First-principles calculations on the density of states and band structures showed reduction of the total energy by the addition of GA and the effectiveness of the nitrogen atoms in GA.
Perovskite photovoltaic devices added with tin (Sn) dichloride and copper (Cu) bromide were fabricated and characterized. The thin film devices were prepared by an ordinary spin-coating technique using an air blowing method in ambient air. A decaphenylcyclopentasilane layer was coated at the surface of perovskite layer and annealed at a high temperature of 190 °C. Conversion efficiencies and short-circuit current densities were improved for devices added with Sn and Cu compared with the standard devices. The energy gap of the perovskite crystal decreased through the Sn addition, which was also confirmed by first-principles calculations.
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