Cryogenic Infrared Rays Focal Plane Array (IRFPA) detectors have been widely used in industry, transportation, security monitoring, meteorology and medicine because of the high sensitivity and temperature resolution. For HgCdTe IRFPA detectors, the typical working temperature is about 80 K. To make the IRFPA detector works at low temperatures, the detector should be integrated on a Dewar cold platform, whose refrigeration power would be higher than the heat load of the IRFPA. In general, the IRFPA detector and the Dewar cold platform would be integrated together to form a Dewar assembly at room temperature. In addition, the materials in IRFPA have different thermal expand coefficients, it means the thermal mismatch in the IRFPA would be an unavoidable issue in work. The thermal strain has a significant effect on the solder joints in switching cycle, which could lead to the creep strain and thermal fatigue crack. With the increase of the switch cyclic number, the creep strain and thermal fatigue crack under the thermal stress would lead to the failure of solder joints. Therefore, the low temperature thermal strain in switching cycle can affect the reliability of IRFPA detectors. So, the low temperature thermal strain and the creep lifetime of solder joints has been researched.
The AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reverse leakage current (Jr) since the two-dimensional electron gas (2DEG) channel is hard to be pinched off at low voltage. To address this limitation, a graded AlGaN/GaN heterostructure is introduced to extend the 2DEG channel into a quasi-three-dimensional electron slab. By comparing the fixed Al composition AlGaN/GaN SBD, Jr of the graded AlGaN/GaN SBD is significantly reduced due to the extension of channel carriers, confirming the effective Jr suppression effect of this structure. Furthermore, on this basis, a recessed anode structure is utilized to expect a smaller Jr. The results indicated that the graded AlGaN/GaN SBDs with air-bridge structure have achieved a pretty low Jr value (1.6 × 10−13 A at -15 V), and its cutoff frequency is as high as 60.6 GHz. It is expected that such SBDs with low Jr have significant advantages in future applications.
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