This paper explores the physics of the electromagnetic diffraction radiation of a subwavelength holes array excited by a set of evanescent waves generated by a line charge of electron beam moving parallel to the array. Activated by a uniformly moving line charge, numerous physical phenomena occur such as the diffraction radiation on both sides of the array as well as the electromagnetic penetration or transmission below or above the cut-off through the holes. As a result the subwavelength holes array becomes a radiation array. Making use of the integral equation with relevant Green's functions, an analytical theory for such a radiation system is built up. The results of the numerical calculations based on the theory agree well with that obtained by the computer simulation. The relation among the effective surface plasmon wave, the electromagnetic penetration or transmission of the holes and the diffraction radiation is revealed. The energy dependence of and the influence of the hole thickness on the diffraction radiation and the electromagnetic penetration or transmission are investigated in detail. Therefore, a distinct diffraction radiation phenomenon is discovered.

Acetonitrile solvent was applied to grow CuI crystals by the cycle-evaporation method with Cu as the reductant. The growth temperature was 70 °C. The process was performed in a nitrogen atmosphere. Clear, millimeter-scaled CuI single crystals were obtained. Moreover, UV-visible spectra, IR spectra, and XRD were used to investigate the redox processes in the solution. The crystal was characterized by X-ray powder diffraction and differential thermal /thermogravimetry analysis.

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The title compound, [Cu4I4(C9H13N)4], has a distorted cubane-like [Cu4I4] core structure. Each CuI atom is tetra­hedrally coordinated by three I atoms and one N atom of an benzyl­dimethyl­amine ligand. Each I atom acts as a μ3-ligand, linking three CuI atoms. The Cu—I bond distances vary between 2.6328 (7) and 2.7121 (6) Å, while the Cu—N bond distances vary between 2.107 (3) and 2.122 (3) Å.

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