This paper presents a new modeling and simulation method to predict the important statistical performance of single photon avalanche diode (SPAD) detectors, including photon detection efficiency (PDE), dark count rate (DCR) and afterpulsing probability (AP). Three local electric field models are derived for the PDE, DCR and AP calculations, which show analytical dependence of key parameters such as avalanche triggering probability, impact ionization rate and electric field distributions that can be directly obtained from Geiger mode Technology Computer Aided Design (TCAD) simulation. The model calculation results are proven to be in good agreement with the reported experimental data in the open literature, suggesting that the proposed modeling and simulation method is very suitable for the prediction of SPAD statistical performance.
Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ±2 mT magnetic field and output a digital Hall signal in a wide temperature range from −40 °C to 120 °C.
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