Ruthenium (Ru) exhibits excellent electrical properties at the nanoscale, and it can be used to replace Al and Cu as interconnect metals for nodes of 20 nm and below in the next generation of integrated circuits. Ru interconnects mainly exist in the form of films, and Ru targets are used as the key raw materials to produce these films. Establishing whether there is an inheritance relationship in terms of microstructure and electrical properties between these targets and the resultant films will determine whether these are important factors for improving the electrical properties of Ru films and will provide directional guidance for the preparation of Ru targets. In this work, Ru targets were prepared by vacuum hot pressing with two different Ru powders with different morphologies and particle sizes. Ru films were then deposited on SiO2/Si(100) substrates by RF magnetron sputtering at substrate temperatures ranging from room temperature (RT, about 25 °C) to 400 °C. The microstructures and electrical properties of the Ru targets and Ru films were investigated by high-resolution field-emission scanning electron microscopy, x ray diffraction, atomic force microscopy, four-probe resistivity measurements, and digital conductivity tests. The results showed that Ru targets with a more uniform microstructure had lower resistivity; furthermore, Ru films deposited by Ru targets with a more uniform microstructure were preferentially crystallized, and they also had a faster average deposition rate, a smaller average grain size, and lower surface roughness. However, no correlation was found between the crystal orientations of the Ru films and Ru targets.
Platinum oxide electrode, as an important part of hydrogen concentration monitoring sensor built in containment, needs to withstand extreme conditions such as high temperature, high humidity, and high irradiation and can still work normally even in the case of serious accidents, which puts forward higher requirements for its performance. In present study, platinum oxide film electrode was successfully prepared with three‐dimensional nano‐dendritic, uniform, and crack‐free on platinum substrate by reactive magnetron sputtering, and the influence of different substrate temperature and sputtering atmosphere on the composition, morphology, and electrocatalytic property of the film was investigated. The results show that platinum oxide film is composed of PtO and PtO2. As the temperature increases from room temperature (RT) to 200°C, the oxygen vacancies in the amorphous film are gradually repaired and convert to the crystalline state, which shows increasing PtO2 ratio, increasing electrochemical active area (ECSA), and improved stability. When the temperature is rising to 400°C, the film shows decreasing oxygen vacancies, increasing average grain size. Because PtO2 decomposes into PtO and Pt, and thus ECSA decreases, the stability and oxygen reduction activity of the films decreases gradually. At the same temperature, the crystalline film obtained in Ar/50%O2 has higher concentration of oxygen vacancies and smaller average grain size than that obtained in O2, resulting in larger ECSA and relatively good stability. By contrast, the platinum oxide film electrode prepared in Ar/50%O2 and 200°C has better stability and excellent electrocatalytic activity for oxygen reduction.
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