Photoemission-assisted plasma irradiation of a 2 00 Cu substrate was performed to clarify the effect of ion impingement on the substrate. With the use of a photoemission-assisted plasma apparatus, the photoemission-assisted plasma was evaluated by optical emission spectroscopy and discharge characteristics. The density ratio of Ar ions and atoms increases with increasing the bias voltage of photoemission-assisted plasma. Changes in the surface morphology of the substrate were investigated using atomic force microscopy. Sufficient ion density can be obtained in photoemission-assisted Townsend discharge, and surface roughness of the Cu substrate decreased as the plasma irradiation time increased. This result indicates that ion impingement from photoemission-assisted Townsend plasma can sputter the metal surfaces, leading to a decrease in surface roughness.
2″ -size Al and Si substrates were treated by photoemission-assisted DC discharge Ar plasma, in which photoelectrons emitting from the negatively biased substrate surface under UV light irradiation are utilized as a trigger of discharge and therefore the substrate surface can be exposed to accelerated Ar + ions. The surface morphology of Al surfaces, prepared by mechanical grinding, showed a signiˆcant decrease of arithmetical average roughness (Ra) from 341.9 nm to 260.2 nm due to Ar + ion sputtering for an irradiation time of 100 min. The Si surface was also etched with maintaining surface ‰atness at Ra=1 2 nm, while protrusions grew, perhaps resulting from agglomeration of sputtered Si atoms and/or masking eŠects of dusts. These resulsts suggest that the photoemission-assisted DC discharge plasma is applicable as an ion source for improving surface roughness of substrates.
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