A high field electroluminescent device having two light emitting mechanisms—direct impact excitation and carrier recombination—was fabricated in order to improve the luminous efficiency. For the carrier recombination process, a TPD/Alq3 stacked layer and a ZnTe/ZnO stacked layer were used. Although the emission intensity from carrier recombination is poor, emission due to carrier recombination and impact excitation was observed from a single device. In this device, an electron has two roles: one is impact excitation and the other is recombination with a hole. It is shown that one electron gives two or more photons from a DC electroluminescent device.