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In this letter, a terahertz monolithic integrated planar band-pass filter based on coplanar waveguide (CPW) resonators has been proposed. By adopting the feeding line in form of a slotline, the need for air-bridges in traditional CPW filters is eliminated, achieving good integrability and reducing fabrication difficulty. To further improve the filtering performance, the defected ground structure is used in the design, introducing a finite transmission zero at the lower sideband. The filter is manufactured on the semi-insulation silicon carbide (SiC) substrate, to fit the existing advanced GaN-on-SiC monolithic integration system. Measurement reveals the fractional band-width of 5.7% at the center frequency of 279 GHz, with an insertion loss of 5.1 dB. With a volume of 500 × 400 × 50 μm (0.45 × 0.36 × 0.045 λ 0 ), the proposed filter improves the performance of the planar filter operating at the terahertz band effectively.

This paper presented a narrow-band terahertz integrated cavity filter based on the silicon carbide (SiC) substrate. By introducing two metalized via-holes in a rectangular integrated cavity, an integrated coupling cavity was built, on the one hand, to operate as a coupling structure; on the other hand, to control the direct coupling between input and output feeding lines, further to control the frequency of the transmission zero. This novel approach was thoroughly investigated with attention paid to the position of the via-holes. Based on this approach, a terahertz narrow-band filter was realized on the semi-insulating SiC substrate, demonstrated good filtering performance, especially the stopband rejection characteristic, and established the groundwork for the production of the terahertz monolithic integrated circuit (TMIC).

In this study, a low temperature cofired ceramic (LTCC) based compact millimeter-wave (MMW) 3-D substrate integrated waveguide (SIW) filtering antenna was proposed. First, a band-pass filter with two transmission zeros in the upper and lower sidebands was designed, with a fractional bandwidth of 2.03% at a center frequency of 98.1 GHz. The filtering antenna was developed and manufactured on this premise, by adopting an E-shape patch antenna, achieving a superior frequency selection characteristic with a 1.63% impedance bandwidth and out-of-band gain dropped over 15 dB at 92.7 and 101.2 GHz, respectively. With a compact structure size of 2.4 × 1.6 × 0.5 mm 3 (0.78 λ 0 × 0.05 λ 0 × 0.016 λ 0 ), high gain and high selectivity were realized in the MMW band. K E Y W O R D Sband-pass filter, filtering antenna, low temperature cofired ceramic, millimeter-wave, substrate integrated waveguide.