We developed a molecule/polymer composite hole transporting material (HTM) with a periodic microstructure for morphology replication of a corrugated Au electrode, which in combination plays a dual role in the optical and electronic enhancement of high performance perovskite solar cells (PSCs). The electro-optics revealed that perovskite couldn't readily extinct the red light even though the thickness increased to 370 nm, but we found that the quasi periodic microstructure composite (PMC) HTM in combination with the conformal Au electrode could promote the absorption through the enhanced cavity effects, leading to comparable absorption even using much thinner perovskite (240 nm). We identified that the cavity was the combination of Fabry-Pérot interferometer and surface plasmonic resonance, with light harvesting enhancement through surface plasmon polariton or waveguide modes that propagate in the plane of the perovskite layer. On the other hand, the PMC HTM increased hole conductivity by one order of magnitude with respect to standard spiro-OMeTAD HTM due to molecular packing and self-assembly, embodying traceable hole mobility and density elevation up to 3 times, and thus the hysteresis was greatly avoided. Owing to dual optical and electronic enhancement, the PMC PSC afforded high efficiency PSC using as thin as 240 nm perovskite layer, delivering a V(oc) of 1.05 V, J(sc) of 22.9 mA cm(-2), FF of 0.736, and efficiency amounting to 17.7% PCE, the highest efficiency with ultrathin perovskite layer.

An improved hydrophilic aluminum nitrate solution was designed to spin coat robust dielectric layers for thin film transistors.

The effects of visible-light detection based on solution processed poly[N-9′′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′benzothiadiazole) (PCDTBT) capped InGaZnOx (IGZO) phototransistors with Al2Ox serving as gate dielectric are investigated in this paper. The high-k dielectric is used to lower the device operating voltage down to 2 V. Photons emitted from laser sources with the wavelengths (λ) of 532 nm and 635 nm are absorbed through the layer of PCDTBT to generate electron-hole-pairs (EHPs). After the separation of EHPs, electrons are injected into IGZO layer through the p-n junction formed between the IGZO (n-type semiconductor) and the PCDTBT (p-type semiconductor). The photo-generated carriers boost the drain current of the transistors as well as bring about the negative threshold voltage shift. Significant enhanced detection performance is achieved under the laser wavelength of 532 nm. The highest photoresponsivity reaches up to 20 A/W, while the photoresponse rise time comes to 10 ms and the fall time comes to approximate 76 ms, which is much faster than trap assisted IGZO visible light detection. The fabricated phototransistors favor the application of visible-light detectors and/or optical switches.

Organic solar cells based on bis(trifluoromethanesulfonyl)amide (TFSA, [CF3SO2]2NH) bulk doped poly[N-9''-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole) (PCDTBT):C71-butyric acid methyl ester (PC71BM) were fabricated to study the effect of molecular doping. By adding TFSA (0.2-0.8 wt %, TFSA to PCDTBT) in the conventional PCDTBT:PC71BM blends, we found that the hole mobility was increased with the reduced series resistance in photovoltaic devices. The p-doping effect of TFSA was confirmed by photoemission spectroscopy that the Fermi level of doped PCDTBT shifts downward to the HOMO level and it results in a larger internal electrical field at the donor/acceptor interface for more efficient charge transfer. Moreover, the doping effect was also confirmed by charge modulated electroabsorption spectroscopy (CMEAS), showing that there are additional polaron signals in the sub-bandgap region in the doped thin films. With decreased series resistance, the open-circuit voltage (Voc) was increased from 0.85 to 0.91 V and the fill factor (FF) was improved from 60.7% to 67.3%, resulting in a largely enhanced power conversion efficiency (PCE) from 5.39% to 6.46%. Our finding suggests the molecular doping by TFSA can be a facile approach to improve the electrical properties of organic materials for future development of organic photovoltaic devices (OPVs).

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