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______________________________________________________________________________________________________ Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light emitters and absorbers. The surface properties of the polar semiconductor, such as GaN are dominated by interface phonons, thus the optical properties of the vertical heterostructure depend strongly on the interface exciton-phonon coupling. The origin and activation of different Raman modes in the heterostructure due to coupling between interfacial phonons and optically generated carriers in a monolayer MoS2-GaN (0001) heterostructure was observed. This coupling strongly influences the nonequilibrium absorption properties of MoS2 and the emission properties of both semiconductors. Density functional theory (DFT) calculations were performed to study the band alignment of the interface, which revealed a type-I heterostructure. The optical excitation with interband transition in MoS2 at K-point strongly modulates the C excitonic band in MoS2. The overlap of absorption and emission bands of GaN with the absorption bands of MoS2 induces the energy and charge transfer across the interface with an optical excitation at Γ-point. A strong modulation of the excitonic absorption states is observed in MoS2 on GaN substrate with transient optical pump-probe spectroscopy. The interaction of carriers with phonons and defect states leads to the enhanced and blue shifted emission in MoS2 on GaN substrate. Our results demonstrate the relevance of interface coupling between phonons and carriers for the development of optical and electronic applications. ______________________________________________________________________________________________________

Organic-inorganic hybrid perovskites have attracted intensive attention due to their exceptional optoelectronic properties. With a massive leap of efficiency from 3.8 % to 25.2 % in a decade, perovskite solar...

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The near-field interaction due to a strong electromagnetic field induced by resonant localized plasmons can result in a strong coupling of excitonic states or the formation of hybrid excitonplasmon modes in quantum confined structures. The strength of this coupling can be increased by designing a system with its vibronic states resonant to the energy of the driving field induced by the localized plasmon excitation. Silver (Ag) nanoparticles (NPs) nucleated on molybdenum disulfide (MoS2) is an ideal platform for such interaction. The influence of localized plasmons (LSP) on the formation and dissociation of excitons due to resonant and off-resonant optical excitation of carriers to excitonic states is studied using ultrafast optical spectroscopy. The presence of Ag-NPs generates a local field that enhances the magnitude of the Raman modes in MoS2 under the resonant plasmon excitation. An ultrashort pulsed optical excitation at ~ 2.3 eV resonantly excites the LSP modes and the optical near-field resonantly drives the phonon modes, which leads to a coherent coupling of the A and B excitons in MoS2 with the plasmon modes. The localized near-field optical driving source induces dressed vibronic states. The resonant excitation of the LSP modes modulates the optical absorption of the probe field. The optical excitation at ~ 3.0 eV, which is resonant to the C excitonic state but off-resonant to the LSP modes, increases the electrostatic screening in the presence of excess carriers from Ag-NPs. It results in a faster dissociation of optically generated C excitons into free carriers that eventually increases the population of A and B excitonic states. The coherent interaction in the hybrid nano-plasmonic system is described using a density matrix theory.

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The effect of localized plasmon on the photoemission and absorption in hybrid molybdenum disulfide-Gallium nitride (MoS2-GaN) heterostructure has been studied. Localized plasmon induced by platinum nanoparticles was resonantly coupled to the bandedge states of GaN to enhance the UV emission from the hybrid semiconductor system. The presence of the platinum nanoparticles also increases the effective absorption and the transient gain of the excitonic absorption in MoS2. Localized plasmons were also resonantly coupled to the defect states of GaN and the exciton states using gold nanoparticles. The transfer of hot carriers from Au plasmons to the conduction band of MoS2 and the trapping of excited carriers in MoS2 within GaN defects results in transient plasmon-induced transparency at ~1.28 ps. Selective optical excitation of the specific resonances in the presence of the localized plasmons can be used to tune the absorption or emission properties of this layered 2D-3D semiconductor material system.