ZnO/Zn0.9Mg0.1O/ZnO heterostructure was grown by radio frequency plasma-assisted molecular beam epitaxy on a sapphire (0001) substrate. By using RBS/C, the depth-dependent elastic strain was deduced. The strain changes from negative to positive from interface to surface, and the value is higher at the depth close to the interface (also at the interface between ZnO and Zn0.9Mg0.1O) and decreases towards the surface. The negative tetragonal distortion was explained by considering the lattice mismatch and thermal mismatch between ZnO and sapphire substrate, and the positive distortion is due to the tensile strain in the parallel direction of Zn0.9Mg0.1O and the gradual release of the strain.
Highly oriented ZnO whiskers were prepared on glass substrates by metal-organic chemical vapor deposition (MOCVD) at atmospheric pressure. X-ray diffraction result reveals that ZnO whiskers grow along [0001] direction and the crystal structure of ZnO is of wurtzite type. Scanning electron microscopic observations show that the length and shape of the whiskers are almost uniform. The diameters range from 100 to 800nm ,and the curvature radius of the whisker tip is about 50nm or even less. The chemical reaction process during the preparation of whiskers is discussed and a simple growth model of ZnO whisker deposited by MOCVD is proposed.
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