There have always been concerns for operation and service safety of electroexplosive devices (EEDs) in an electromagnetic environment. To discuss new EEDs, semiconductor junction igniter (SJI) with p-n junction is researched theoretically and experimentally in this paper. The theoretical analysis indicates that N-doped concentration is the key factor dominating SJI performances. In electroexplosive experiments, the SJIs are fired with a capacitor charged to 160 V. Results show that it goes through four stages during the electroexplosive process, and the highest temperature exceeds 6000 K. Meanwhile, function mechanisms have been analyzed. In the safety tests, none of the samples fired with a 25-kV electrostatic voltage, and the all-fire radio frequency (RF) input power is 13.07 W, which are both behavior better than that of the polysilicon igniters. Electrostatic and RF safety can be improved with SJI parameter adjustments.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.