Magnesium oxide (MgO) sensing membranes in pH-sensitive electrolyte-insulator-semiconductor structures were fabricated on silicon substrate. To optimize the sensing capability of the membrane, CF4 plasma was incorporated to improve the material quality of MgO films. Multiple material analyses including FESEM, XRD, AFM, and SIMS indicate that plasma treatment might enhance the crystallization and increase the grain size. Therefore, the sensing behaviors in terms of sensitivity, linearity, hysteresis effects, and drift rates might be improved. MgO-based EIS membranes with CF4 plasma treatment show promise for future industrial biosensing applications.
In this study, CeO2 pH-sensitive sensing membranes in electrolyte-insulator-semiconductor structures on silicon substrate were fabricated. To enhance sensing performance, the membrane underwent Ti doping and NH3 plasma treatment on the surface. To examine the effects of Ti doping and plasma treatment, multiple material properties evaluations were conducted using field-emission scanning electron microscopy, X-ray diffraction, atomic force microscopy, and secondary ion mass spectroscopy. Results indicate that Ti doping and plasma treatment can remove defects and enhance crystallization, thereby achieving improved pH-sensing performance of the membrane with high sensitivity, high linearity, low hysteresis voltage and low drift voltage. CeO2-based EIS membranes with Ti doping and NH3 plasma treatment show promise for future portable pH-sensitive biosensors.
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