This study proposes a theoretical model to examine the relationships between organizational culture (OC), knowledge transfer (KT), and innovation capability (CI) in Taiwan's semiconductor industry. Structural equation modelling is employed to discuss the degree of influence on each construct. In order to recognize what the better model and whether the model will be moderated for different industry chain positions (upstream, midstream, and downstream), this study uses competing models and multi-group analysis. A total of 433 valid responses were collected from 10 Taiwan semiconductor firms' R&D departments. Through the competing models, we find that supportive culture is better than bureaucratic and innovative culture. Findings also reveal that managers should shape a supportive culture and encourage KT to promote CI in the semiconductor industry supply chain. KT is a partial mediator between OC and CI. In addition, after multi-group analysis, the results show that culture has significantly different relationships with KT and CI.
In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn2O3−xN film, additional annealing at 450 °C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu/Mn2O3−xN/p-SiOCH(N)/Si structure were investigated. The proposed Cu/Mn2O3−xN/p-SiOCH(N)/Si capacitors exhibited poor dielectric breakdown characteristics in the as-fabricated stage, although, less degradation was found after thermal stress. Moreover, its time-dependence-dielectric-breakdown electric-field acceleration factor slightly increased after thermal stress, leading to a larger dielectric lifetime in a low electric-field as compared to other metal-insulator-silicon (MIS) capacitors. Furthermore, its Cu barrier ability under electrical or thermal stress was improved. As a consequence, the proposed Cu/Mn2O3−xN/p-SiCOH(N) scheme is promising integrity for back-end-of-line interconnects.
In this study, the effect of ultraviolet (UV)-assisted thermal curing on the electrical properties and reliability of a SiCN/SiCOH stacked dielectric was investigated. UV-assisted thermal curing on the SiCN/ porogen-contained SiOCH stacked dielectric did not impose any improvement due to the remained carbon residues at the interface. With the SiCN capping layer, carbon residues resulted from porogen precursor in the SiOCH film were limited, thereby hardly diffusing out to air. On the other hand, for the SiCN/porous SiOCH (p-siOCH) stacked dielectric, post UV-assisted thermal curing indeed improved the hardness, adhesion, electrical characteristics, and reliability. Additionally, its barrier capacity against Cu migration under an annealing at 450 °C was not degraded for UV-assisted thermal cured SiCN/p-SiOCH stacked dielectrics. Consequently, post UV-assisted thermal curing on an integrated dielectric stack with a porous low-k SiOCH dielectric and a SiCN capping barrier is a promising processing for reliability enhancement.
Silicon carbonitride (SiCN) films deposited using silazane singe-precursor with different temperatures were capped onto porous carbon-doped silicon oxide (p-SiOCH) dielectric films. Effects on the electrical and reliability characteristics of the fabricated SiCN/p-SiOCH stacked dielectrics were investigated. Experimental results indicated that increasing the deposition temperature of the SiCN film increased barrier capacity against Cu migration under thermal and electrical stress and time-dependence-dielectric-breakdown reliability for the SiCN/p-SiOCH stacked dielectric. Therefore, this study provides a promising processing to deposit a SiCN barrier by elevating the deposition temperature and using N-methyl-aza-2,2,4-trimethylsilacyclopentane singe-precursor, which can be applied to back-end-of-line interconnects for advanced technological nodes in the semiconductor industry. A larger capacitance, however, is the main issue due to a larger intrinsic dielectric constant of the SiCN film and stronger plasma-induced damage on the p-SiOCH film. As a result, the related actions will be taken in the future research to improve this issue.
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