Comparison of SiCxNy barriers using different deposition precursors capped on porous low-dielectric-constant SiOCH dielectric film

Electrical Characteristics and Reliability of SiCN/Porous SiOCH Stacked Dielectric: Effects of Deposition Temperature of SiCN Film

“…The mechanism of the increased capacitance is believed to the plasmainduced damage on the p-SiOCH film during the deposition of SiCN film. 20,27 Here, the increasing ratio in the capacitance related to the ideal value is defined as "plasma damage" index for Cu/SiCN/p-SiOCH stacked structures, being a lower value representing less damage. Figure 1 compares the plasma damage index for two Cu/ SiCN/p-SiOCH stacks with the SiCN films deposited at different temperatures.…”

“…[16][17][18][19] To ensure a better integrity with a porous low-k film, using silazane single-precursor, such as Nmethyl-aza-2,2,4-trimethylsilacyclopentane (MTSCP), (dimethylamino)triethylsilane (DMATES), (dimethylamino)trimethylsilane (DMATMS), and 1,3-divinyl-1,1,3,3-tetramethyl-disilazane (DVTMDS), to deposit the SiCN film is a promising processing with less plasma damage and better reliability. [17][18][19][20][21] Further research on such SiCN processing is still lacking. The deposition temperature in the plasma-enhanced chemical vapor deposition (PECVD) is considered to play an important role in film's properties, 22,23 therefore, effects of the deposition temperature of SiCN film using silazane singe-precursor on the SiCN/ porous low-k stacked dielectric were investigated in this study.…”

Reliability Improvement for Stacked Dielectric with Low-k SiOCH Dielectric and SiCN Barrier by UV-Assisted Thermal Curing

“…Recent studies 15,16 have shown that UV-assisted thermal curing results in changes of the film properties of pristine SiOCH film and SiCN barrier, as summarized in Table I. For the SiCOH film deposited with an organic precursor, UV-assisted thermal curing removes the organic precursor and forms the pores within the film; it also modifies the skeleton structure and enhances film's mechanical properties.…”

“…For the SiCOH film deposited with an organic precursor, UV-assisted thermal curing removes the organic precursor and forms the pores within the film; it also modifies the skeleton structure and enhances film's mechanical properties. 15 When deposited by a single-source precursor, the SiCN barriers after UV-assisted thermal curing become silicon-rich, associated with a significant decrease in carbon composition. 16 Additionally, UV-assisted thermal curing results in a reduction of film thickness, k value, and density, while Young's modulus is increased due to the enhancement of cross-linking and rearrangement of the film's skeleton structure.…”

“…9,10 SiCN dielectric film has reduced k values of 4.0 ∼ 5.5, and has been as an alternative Si 3 N 4 barrier. 11,12 SiCN dielectric barriers are generally deposited by PE-CVD using either singlesource or multi-source precursor, [12][13][14] among which the singlesource precursor deposition method is preferred as it minimizes plasma damage of the underlying porous dielectric 15 and the properties of SiCN barrier can be enhanced by UV-assisted thermal curing. 14 UV-assisted thermal curing is recognized as a promising method to improve the properties of porous low-k dielectrics and SiCN barriers.…”