The effect on point defects of annealing in a phosphorus vapour is studied on GaPN layers grown by vapour phase epitaxy. When the pressure P of the phosphorus (P4) vapour is vaned, the concentration of the deep centre, thermally activated with an activation energy of 0.24 i 0.01 eV given by o m , vacancies. Based on the experimental data obtained, the known models of the nitrogen-related deep centre are analysed and the formation of such a centre is considered in the case when the background Si is the dominant donor impurity. The centre is shown to differ from defects formed with the participation of group VI elements, and a model of the centre is proposed.
The effects of varying the ammonia flux on the concentrations of background Si and free carriers and on deep traps for majority and minority carriers in n-GaP layers grown by vapour epitaxy have been studied by secondary ion mass spectrometry and deep level transient spectroscopy. The contribution from the background silicon to the free carrier concentration in samples variously doped with nitrogen is discussed. It is shown that the deep centre at E c − 0.24 eV may be attributed to silicon. The model of this centre in the form Si Ga -V P accounts for experimental results obtained in the present work and those already reported. The concentration of the dominant nonradiative recombination centre at E v + 0.75 eV is studied, depending on growth conditions, and its model is proposed in the form of a complex consisting of intrinsic defects.
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