The π-electronic structure of graphene in the presence of a modulated electric potential is investigated by the tight-binding model. The low-energy electronic properties are strongly affected by the period and field strength. Such a field could modify the energy dispersions, destroy state degeneracy, and induce band-edge states. It should be noted that a modulated electric potential could make semiconducting graphene semimetallic, and that the onset period of such a transition relies on the field strength. There exist infinite Fermi-momentum states in sharply contrast with two crossing points (Dirac points) for graphene without external fields. The finite density of states (DOS) at the Fermi level means that there are free carriers, and, at the same time, the low DOS spectrum exhibits many prominent peaks, mainly owing to the band-edge states.

The low-frequency optical excitations of AA-stacked bilayer graphene are investigated by the tight-binding model. Two groups of asymmetric LLs lead to two kinds of absorption peaks resulting from only intragroup excitations. Each absorption peak obeys a single selection rule similar to that of monolayer graphene. The excitation channel of each peak is changed as the field strength approaches a critical strength. This alteration of the excitation channel is strongly related to the setting of the Fermi level. The peculiar optical properties can be attributed to the characteristics of the LL wave functions of the two LL groups. A detailed comparison of optical properties between AA-stacked and AB-stacked bilayer graphenes is also offered. The compared results demonstrate that the optical properties are strongly dominated by the stacking symmetry. Furthermore, the presented results may be used to discriminate AABG from MG, which can be hardly done by STM

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