In this work, transparent ZnO thin‐film transistors (TFTs) are fabricated on ITO glass substrate with only solution processes. The active ZnO channels are deposited by spray pyrolysis. The gate dielectric is a spin‐coated high dielectric constant (k) titanium‐silicon oxide (TSO) layer, while the source/drain (S/D) electrodes are patterned by two‐step spray‐printing of silver nanowire (AgNWs)/poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) transparent conductive composite through a shadow mask. The composition and microstructural characteristics of the films, as well as their TFTs performance, are systematically studied as a function of the temperature. The introduction of TSO high k dielectric, with ultraviolet (UV)‐assisted post‐annealing, significantly improves the device performance and achieves a maximum electron mobility (µmax) value as high as 56.2 cm2 V−1 s−1 when measured with thermally‐evaporated Al top electrode. For fully solution‐processed transparent TFTs with low temperature fabricated AgNWs/PEDOT:PSS S/D electrodes, the µmax is calculated to be 9.1 cm2 V−1 s−1 operating at a relatively low voltage of <3 V. The TFTs also show hysteresis‐free electrical characteristics and optical transparency of ≈80% in the visible region of the optical spectrum.