Upon demonstrating self-luminescing quantum dot based light-emitting devices (QD-LEDs), rapid Auger recombination acts as one of the performance limiting factors. Here, we report the Auger processes of highly luminescent InP/ZnSe/ZnS QDs with different midshell structures that affect the performances of QD-LEDs. Transient PL measurements reveal that exciton–exciton binding energy is dependent on the midshell thickness, which implies that the intercarrier Coulomb interaction caused by the introduction of excess charges may come under the influence of midshell thickness which is in contrast with the nearly stationary single exciton behavior. Photochemical electron-doping and optical measurements of a single QD show that negative trion Auger recombination exhibits strong correlation with midshell thickness, which is supported by the dynamics of a hot electron generated in the midshell. These results highlight the role of excess electrons and the effects of engineered shell structures in InP/ZnSe/ZnS QDs, which eventually determine the Auger recombination and QD-LED performances.

fabrication of blue-emitting Cd-free QDs are still under development. [7-10] Above all, the charging of QDs is an obstacle for manufacturing QD-LEDs with good performance. [11] The simple mechanism of EL is that electrons and holes are formed by charge injection, and light is generated by the electron-hole pair recombination. Hence, it is essential to understand the charging process by mimicking EL processes. The complementary combination of spectroscopic technology and electrochemical control helps emulate EL and explain the charging process whether the charges occupy quantum states or trap states. Recently, there has been an increase in research to improve QD luminescence capabilities and charge extraction properties by performing electrochemical charging studies on QD films. [1,12,13] Li et al. [13] have shown that electron injection into the ground excitonic state of CdSe/CdS QDs leads to the bleaching of 1S 3/2 1S e transition because of 1S e state filling. Qin et al. [14] have investigated how the photoluminescence (PL) lifetime changes in CdSeS/ZnS QD under electrochemical control with blinking dynamics. Gooding et al. [15] have studied the effects of hole and electron injection on the PL of CdSe/ CdS/ZnS QDs. Many studies have revealed the effect of electron injection on the optical properties in Cd-based QDs, which leads to environmental issues. Environmentally friendly III-V semiconductors, especially InP QDs, have recently emerged as the best alternative to toxic II-VI semiconductors. [16-17] Meanwhile, the surfaces of InP core QDs are easily oxidized when they are exposed to oxygen environments. As a countermeasure, overcoating nanocrystals with wider band-gap materials has proven to be the best option to increase stability against photo-oxidation and to enhance the photoluminescence quantum yield (PL QY). [5,18,19] For example, the inorganic core can be surrounded by the shell, such as ZnSe and ZnS. [20] Möbius et al. reported that the electrical charges generated by application of a mechanical load are injected into the QDs, leading to PL quenching in InP/ZnS-based device. [17] However, the spectroelectrochemical properties were not yet reported in InP QDs to the best of our knowledge. Recently, we have reported highly luminescent InP/ZnSe/ZnS QDs synthesized with as much high efficiency as state-of-the-art Cd-based QDs. [21] In this study, we analyze the spectroelectrochemical properties depending on mid-shell thickness to identify the effect of charging on highly luminescent InP Semiconductor quantum dots (QDs) are spotlighted as a key type of emissive material for the next generation of light-emitting diodes (LEDs). This work presents the investigation of the electrochemical charging effect on the absorption and emission of the InP/ZnSe/ZnS QDs with different mid-shell thicknesses. The excitonic peak is gradually bleached during electrochemical charging, which is caused by 1S e (or 1S h) state filling when the electron (or hole) is injected into the InP core. Additional charges also lead to photo...