High-quality Zn 0.85 Cd 0.15 Se/ZnSe single quantum wells (SQWs) have been fabricated on GaAs(110) crystal surfaces which were obtained by cleaving GaAs(100) wafers in ultra high vacuum (UHV). The growth interruption was found to prevent the growth of high-quality quantum well structures. The (110)-oriented SQWs grown under appropriate conditions show a very sharp photoluminescence spectrum whose full width at half-maximum (FWHM) is as small as 4.9 meV. The sample showed a strong in-plane polarization angle dependence of the emission intensity, due to the compressive strain in the well layer. The ratio of maximum to minimum values of the polarized PL intensity was 1.6.
Gel'man, Obukhovs kii UDC 517.988.52The present paper is a survey of the contemporary state of art in the theory of multivalued mappings. In it one considers different forms of continuity of multivalued mappings, one investigates differentiable and measurable multivalued mappings, one considers single-valued continuous approximations and sections of multivalued mappings, one studies fixed points of multivalued mappings and other questions of this theory. One gives references to the literature regarding applications to the theory of games, mathematical economics, the theory of differential inclusions and generalized dynamical systems. The paper contains an extensive bibliography.
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