Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to the advantage of simple and compatible preparation technology with current semiconductor devices, while it is a very challenging work, and usually amorphous, polycrystalline or discontinuous single crystalline films are achieved. Here we demonstrate the direct growth of high-quality Bi2Te3 single crystalline films on flexible polyimide substrates by the modified hot wall epitaxy technique. Experimental results reveal that adjacent crystallites are coherently coalesced to form a continuous film, although amounts of disoriented crystallites are generated due to fast growth rate. By inserting a quartz filter into the growth tube, the number density of disoriented crystallites is effectively reduced owing to the improved spiral interaction. Furthermore, flexible Bi2 Te3 photoconductors are fabricated and exhibit strong near-infrared photoconductive response under different degrees of bending, which also confirms the obtained flexible films suitable for electronic applications.
Tellurium cadmium zinc (CdZnTe) is a kind of II-VI wide band-gap semiconductor compound, which is a promising material to fabricate the X-or γ-ray detectors. Its Ohmic contact property significantly influences the detector performance. In order to study the influence of preparation technology on Ohmic contact properties of the electrode, Au film electrodes were deposited by sputtering deposition, vacuum evaporation and electroless deposition. By analyzing I-V curves, SEM and AC impedance spectra, microstructure and Ohmic contact properties of the samples were studied. The results show that surtace of the sample prepared by the electroless deposition is smooth and dense showing lower contact barrier and better Ohmic contact properties smooth and Ohmic contact properties of the electrodes. After annealing at 100℃, the Ohmic coefficient of the Au electrode prepared by electroless deposition increases from 0.883 to 0.915, and the barrier height reduces from 0.492 eV to 0.487 eV, displaying improved.
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