The principal information of II--IV--V 2 compounds and their preparation in layer forro is summarized.The discovery that binary compounds of group III and V elements are semiconducting, with essentially the same diamond-like structure (covalent bonding, tetrahedral atomic arrangement) shown in purer form by group IV elementary conductors such as Ge and Si, soon led to the realization, in the mid-fifties, that justas these binary compounds can be considered formally as resulting from a heterovalent substitution of group IV elements by atoms of the adjacent IIIrd and Vth groups, there should also exist a group of ternary semiconducting compounds producable in similar fashion by the replacement of one of the atoms of a binary compound. Following confirmation of the existence of such ternary compounds, a respectable amount of work has been devoted to them, and especially to those of the II--IV--V~ type, in which the group III atoms of a III--V compound are substituted for group II and IV elements. Suffice it to say that the number of papers on II--IV--V 2 compounds now stands at more than 400 and is increasing progressively. (See, for example, bibliography [1] and review articles [2] and [3].)Yet despite the great interest they are believed to hold for semiconductor technology, deriving in part from their genetic relation to the III--V and group IV elementary semiconductors, in part from the properties they have been found to possess, ternary II--IV--V 2 systems are far less thoroughly investigated than these other materials and information on them is still relatively scarce. This and certain difficulties encountcred in their preparation have probably been responsible, in particular, for the rather limited progress made in exploring the possibility of obtaining ternary compounds in layers and films. At the same time, new trends in the semiconductor devices industry make us consider this problema matter of importance, and this has prompted us to attempt to summarize the principal information available on these compounds and their preparation in layer forin.
The recombination radiation spectra of ZnSiP2 single crystals produced by different methods and doped with different impurities have been measured. The recombination radiation was excited by a high‐energy electron beam. The recombination radiation spectra of ZnSiP2 appeared to be similar to that of the wide forbidden band A3B5 phosphides. The recombination takes place at levels located in the forbidden band of this semiconductor. The investigation of the recombination radiation spectra permits us to judge of luminescent properties of ZnSiP2 crystals produced by different techniques and of their energetic spectrum. In some cases it gives a possibility to some extent to characterize the peculiarities of methods of production of this substance.
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