We have demonstrated a photoelectrochemical solar-blind ultraviolet (UV) detector based on SrTiO3 (STO) nanocrystalline film in this work. The assembled UV detector presents a high on/off ratio of about 6433 under periodic UV irradiation, a high photocurrent density of 220.6 μA cm−2, and a fast response time of 9 ms. By introducing a block layer (BL) on fluorine-doped tin oxide substrate, the response and decay times are shortened to 6 ms and 8 ms, respectively. The BL plays a crucial part in hindering the recombination of electrons from electrolyte carriers and avoiding short circuits. Due to its excellent light capture capability, the detector based on SrTiO3 nanocrystalline exhibits high sensitivity to weak UV light (5 μW cm−2). Moreover, the detector also exhibits visible-blind characteristics and a good linear response.
The FTO/ITO transparent conductive films currently used in photoelectrochemical devices limit performance improvement due to their low conductivity, poor flexibility, and inability to transmit UV light. Ag nanowire-based films are a very promising alternative to address these problems, and are considered to be the next generation in transparent conductive film. Here, we prepared a cross-linked nano-network composed of ultra-long Ag nanowires by a special physical template method. The obtained Ag nanowire transparent conductive film has a transmittance of over 80% in a wide range of 200 nm–900 nm, a sheet resistance as small as 5.2 Ω/sq, and can be easily transferred to various substrates without damage. These results have obvious advantages over Ag nanowire films obtained by traditional chemical methods. Considering the special requirements of photoelectrochemical devices, we have multifunctionally enhanced the film by a TiO2 layer. The heat-resistant temperature of transparent conductive film was increased from 375 °C to 485 °C, and the mechanical stability was also significantly improved. The presence of the multifunctional layer is expected to suppress the carrier recombination in self-powered photoelectrochemical devices and improve the electron diffusion in the longitudinal direction of the electrode, while serving as a seed layer to grow active materials. The high-quality Ag nanowire network and functional layer synergize to obtain a UV–Visible transparent conductive film with good light transmittance, conductivity, and stability. We believe that it can play an important role in improving the performance of photoelectrochemical devices, especially the UV devices.
In order to solve the 'ultraviolet (UV) filtering problem' caused by traditional sandwich-type structure in photoelectrochemical (PEC) UV detector, we design a special electrode based on stainless steel mesh, which integrates the light absorption layer and the electron collection electrode in a simple way. In combination with an UV-transparent quartz substrate, UV light can directly reach the active material. The improved detector shows good visible-blind, selfpowered, and linear response characteristics. The serious recombination caused by metal electrode is suppressed by depositing a barrier layer. The optimized device exhibits a high photoresponse of 0.103 A W −1 at 296 nm, a short recovery time of 250 ms, and very sensitive switching ability. Furthermore, the response range of the detector is expanded from 300 to 400 nm to the full near-UV region. Our work provides an efficient strategy to solve the key problem of the PEC UV detector.
The photoelectrochemical (PEC) UV detector based on the traditional transparent conductive electrode (TCE) has a narrow response range due to the UV filtering effect. Here we prepared an Ag nanowire...
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