Our quantum-dot (QD) electron pump has uniqueness in design in that the QD potential shape can be manipulated, especially its potential depth can be controlled by a plunger gate. We find that there exist strong correlations between the potential depth of the QD and the upper frequency limit, fm, when the modulating microwave power is fixed. As the depth of the QD potential is deepened, fm shows decreasing characteristics while the flatness of the 1st current plateau is increased. We have semi-quantitatively analyzed these correlations by using the notion of so-called “non-adiabatic Coulomb blockade gap energy,” ΔELU. We find that ΔELU parameter being under control by a plunger gate is proportional to the pumping frequency f.
Parallelization of pump devices is a direct way to increase the output level of the single-electron pump, which is required for metrological purposes. We fabricated a pair of single-electron pumps in parallel on a chip level and investigated their synchronized electron pumping phenomena. In the investigation, the pumping error was estimated to see whether the error was increased after the parallelization. We found that a proper choice of rf gates must be made in accordance with the direction of the applied magnetic field. In relation with the chirality of the edge state, the rf modulating gates should be chosen not to produce rf-induced heating effects.
We developed an electron-counting technique for a self-referenced single-electron quantized current source of a single-electron-pump system and investigated the fidelity of our whole measurement process, including single-electron pumping and electron counting by a single-electron transistor (SET) with a charge-lock feedback loop. The device was fabricated monolithically using a two-dimensional electron system of a GaAs/AlGaAs hetero-junction. In addition to the probability of single-electron transfer, we also measured the current noise spectrum of the SET, from which its charge noise power [Formula: see text] was derived. The results show that the estimated charge noise of 2.2 [Formula: see text] for a semiconductor-based SET is comparable to that of metallic SETs.
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