Oxide growth kinetics of SiO2 films grown on silicon at 950 to 1100 °C in an O2/N2 mixture is empirically studied. It is found that a linear-parabolic law is in excellent agreement with the oxidation data under the oxygen partial pressure PO2 of 1 or 10−1 atm. However, a parabolic law is obtained at 10−2 atm, and an inverse-logarithmic law at 10−3 atm. The Mott-Cabrera oxidation rate equation is adapted to the thermal oxidation of silicon in the case of PO2≲10−2 atm. Finally, 43.9 kcal/mole is derived as the activation energy value of silicon atoms entering into the oxide.
The solubility and diffusion coefficient of oxygen in silicon between 1000°C and 1375°C were examined by charged particle activation analysis with the 16O(3He, p)18F reaction, in which oxygen was activated with an equal probability over the depth of up to 250 µm by a specially devised apparatus. Silicon wafers of known histories were heated in oxygen or argon for 12 to 473 hours, and the resultant oxygen depth profiles were determined by the activation, subsequent stepwise etching and 18F activity measurement. The solubility thus obtained is given as 9.3×1021 exp
[-27.6 kcal mol-1/R
T] at·cm-3; the diffusion coefficient has been found to be approximated as 3.2 exp
[-67.1 kcal mol-1/R
T] cm2 s-1 over 1150°C, under which the apparent activation energy seems to decrease with decrease of temperature.
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